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Philips Semiconductors Product specification
Dual rectifier diodes BYV74W series
ultrafast
ELECTRICAL CHARACTERISTICS
characteristics are per diode at Tj
= 25 ?C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VF
Forward voltage IF
= 15 A; T
j
= 150?C - 0.95 1.12 V
IF
= 15 A - 1.08 1.25 V
IF
= 30 A - 1.15 1.36 V
Reverse current VR
= V
RRM
-1050μA
VR
= V
RRM; Tj
= 100 ?C - 0.3 0.8 mA
Reverse recovery charge IF
= 2 A to V
≥
30 V; - 40 60 nC
dIF/dt = 20 A/Rμs
Reverse recovery time IF
= 1 A to V
R≥
30 V; - 50 60 ns
dIF/dt = 100 A/μs
Peak reverse recovery current IF
= 10 A to V
dI/dt = 50 A/μR
≥
30 V; - 4.2 5.2 A
F
s; Tj
= 100?C
Forward recovery voltage IF
= 10 A; dI
F/dt = 10 A/μs - 2.5 - V
IR
Qs
trr
Irrm
Vfr
Fig.1. Definition of trr, Qs
and I
rrm
Fig.3. Maximum forward dissipation PF
= f(I
F(AV)) per
diode; square wave where IF(AV)
=I
F(RMS)
x
√D.
Fig.2. Definition of Vfr
Fig.4. Maximum forward dissipation PF
= f(I
F(AV)) per
diode; sinusoidal current waveform where a = form
factor = IF(RMS)
/ I
F(AV).
Qs
10%100%
time15
dIF
dt
IR
IF
Irrm
trr
0
150
0 5 10 15 20 25
IF(AV) / A
5
10
20
25
30PF / W
Rs = 0.0137 OhmsVo = 0.8900 VD = 1.0
0.5
102
0.2
0.1
BYV44Tmb(max) / C88
Itp
D = tp126T
T
t
138
114
90
time10
0
time0 5 10 15
150
IF(AV) / A
VF
V
5
fr
VF
IF
15
20PF / W
Rs = 0.01371.9
2.22.8
4
BYV44Tmb(max) / C102
Vo = 0.89a = 1.57
138
126
114
April 1998 2 Rev 1.000
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